4v drive nch mosfet RQ1E075XN ? structure ? dimensions (unit : mm) silicon n-channel mosfet ? features 1) low on-resistance. 2) built-in g-s protection diode. 3) small surface mount package (tsmt8). ? application switching ? packaging specifications ? inner circuit package taping code tcr basic ordering unit (pieces) 3000 RQ1E075XN ? absolute maximum ratings (ta = 25 ? c) symbol limits unit drain-source voltage v dss 30 v gate-source voltage v gss ? 20 v continuous i d ? 7.5 a pulsed i dp ? 30 a continuous i s 1.25 a pulsed i sp 30 a power dissipation p d 1.5 w channel temperature tch 150 ? c range of storage temperature tstg ? 55 to ? 150 ? c *1 pw ? 10 ? s, duty cycle ? 1% *2 mounted on a ceramic board. ? thermal resistance symbol limits unit channel to ambient rth (ch-a) 83.3 ? c / w *mounted on a ceramic board. parameter type source current (body diode) drain current parameter tsmt8 (8) (7) (5)(6) (1) (2) (4)(3) * (1) source (2) source (3) source (4) gate (5) drain (6) drain (7) drain (8) drain ? 1 esd protection diode ? 2 body diode abbreviated symbol : xr *2 *1 *1 ?2 ?1 (8) (7) (6) (5) (1) (2) (3) (4) 1/6 2011.04 - rev.a data sheet www.rohm.com ? 2011 rohm co., ltd. all rights reserved.
RQ1E075XN ? electrical characteristics (ta = 25 ? c) symbol min. typ. max. unit gate-source leakage i gss -- ? 10 ? av gs = ? 20v, v ds =0v drain-source breakdown voltage v (br)dss 30 - - v i d =1ma, v gs =0v zero gate voltage drain current i dss --1 ? av ds =30v, v gs =0v gate threshold voltage v gs (th) 1.0 - 2.5 v v ds =10v, i d =1ma -1217 i d =7.5a, v gs =10v -1724 i d =7.5a, v gs =4.5v -1927 i d = 7.5 a, v gs =4.0v forward transfer admittance l y fs l 4.5 - - s i d =7.5a, v ds =10v input capacitance c iss - 440 - pf v ds =10v output capacitance c oss - 170 - pf v gs =0v reverse transfer capacitance c rss - 85 - pf f=1mhz turn-on delay time t d(on) -7-nsi d =3.75a, v dd 15v rise time t r - 25 - ns v gs =10v turn-off delay time t d(off) - 35 - ns r l =4.0? fall time t f -7-nsr g =10 ? total gate charge q g - 6.8 - nc i d =7.5a, v dd 15 ? gate-source charge q gs - 1.6 - nc v gs =5v gate-drain charge q gd - 2.6 - nc *pulsed ? body diode characteristics (source-drain) (ta = 25 ? c) symbol min. typ. max. unit forward voltage v sd - - 1.2 v i s =7.5a, v gs =0v *pulsed conditions conditions m ? parameter parameter static drain-source on-state resistance r ds (on) * * * * * * * * * * 2/6 2011.04 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
RQ1E075XN ? electrical characteristic curves (ta=25 ? c) 0 1 2 3 4 5 6 7 0 0.2 0.4 0.6 0.8 1 v gs = 2.5v v gs = 3.0v v gs = 2.8v v gs = 10v v gs = 4.5v v gs = 4.0v v gs = 2.0v ta=25 c pulsed fig.1 typical output characteristics( ) drain current : i d [a] drain - source voltage : v ds [v] 0 1 2 3 4 5 6 7 0 2 4 6 8 10 v gs = 10v v gs = 4.5v v gs = 4.0v v gs = 2.8v v gs = 2.5v v gs = 2.0v ta=25 c pulsed fig.2 typical output characteristics( ) drain - source voltage : v ds [v] drain current : i d [a] 0.001 0.01 0.1 1 10 100 0 1 2 3 v ds = 10v pulsed ta=125 c ta=75 c ta=25 c ta= - 25 c fig.3 typical transfer characteristics drain current : i d [a] gate - source voltage : v gs [v] 1 10 100 0.01 0.1 1 10 100 v gs = 4.0v v gs = 4.5v v gs = 10v . ta=25 c pulsed fig.4 static drain - source on - state resistance vs. drain current( ) drain - current : i d [a] static drain - source on - state resistance : r ds ( on )[m ? ] 1 10 100 0.01 0.1 1 10 100 v gs = 10v pulsed ta=125 c ta=75 c ta=25 c ta= - 25 c fig.5 static drain - source on - state resistance vs. drain current( ) drain - current : i d [a] static drain - source on - state resistance : r ds ( on )[m ? ] 1 10 100 0.01 0.1 1 10 100 v gs = 4.5v pulsed ta=125 c ta=75 c ta=25 c ta= - 25 c fig.6 static drain - source on - state resistance vs. drain current( ) drain - current : i d [a] static drain - source on - state resistance : r ds ( on )[m ? ] 3/6 2011.04 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
RQ1E075XN 1 10 100 0.01 0.1 1 10 100 v gs = 4.0v pulsed ta=125 c ta=75 c ta=25 c ta= - 25 c fig.7 static drain - source on - state resistance vs. drain current( ) drain - current : i d [a] static drain - source on - state resistance : r ds ( on )[m ? ] 0.1 1 10 100 0.01 0.1 1 10 v ds = 10v pulsed ta=125 c ta=75 c ta=25 c ta= - 25 c fig.8 forward transfer admittance vs. drain current forward transfer admittance : |yfs| [s] drain - current : i d [a] 0.01 0.1 1 10 100 0 0.5 1 1.5 v gs =0v pulsed ta=125 c ta=75 c ta=25 c ta= - 25 c fig.9 reverse drain current vs. sourse - drain voltage source current : is [a] source - drain voltage : v sd [v] 0 10 20 30 40 50 0 2 4 6 8 10 i d = 7.5a i d = 3.75a ta=25 c pulsed fig.10 static drain - source on - state resistance vs. gate source voltage static drain - source on - state resistance : r ds ( on )[m ? ] gate - source voltage : v gs [v] 1 10 100 1000 0.01 0.1 1 10 100 t f t d(on) t d(off) ta=25 c v dd =15v v gs =10v r g =10 pulsed t r fig.11 switching characteristics switching time : t [ns] drain - current : i d [a] 0 2 4 6 8 10 0 2 4 6 8 10 12 14 16 ta=25 c v dd = 15v i d = 7.5a r g =10 pulsed fig.12 dynamic input characteristics gate - source voltage : v gs [v] total gate charge : qg [nc] 4/6 2011.04 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
RQ1E075XN 10 100 1000 10000 0.01 0.1 1 10 100 c iss c rss ta=25 c f=1mhz v gs =0v c oss fig.13 typical capacitance vs. drain - source voltage drain - source voltage : v ds [v] capacitance : c [pf] 0.01 0.1 1 10 100 1000 0.1 1 10 100 p w = 10ms dc operation operation in this area is limited by r ds(on) (v gs =10v) p w =100us p w =1ms ta=25 c single pulse mounted on a ceramic board. (30mm 30mm 0.8mm) fig.14 maximum safe operating aera drain current : i d (a) drain - source voltage : v ds [v] 0.001 0.01 0.1 1 10 0.0001 0.001 0.01 0.1 1 10 100 1000 mounted on a ceramic board. (30mm 30mm 0.8mm) rth (ch - a) =83.3 c /w rth (ch - a) (t)=r(t) rth (ch - a) fig.15 normalized transient thermal resistance vs. pulse width pulse width : pw(s) normarized transient thermal resistance : r (t) 5/6 2011.04 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
RQ1E075XN ? measurement circuits ? notice this product might cause chip aging and breakdown under the large electrified environment. please consider to design esd protection circuit. v gs r g v d s d.u.t. i d r l v dd 90% 90% 90 % 10% 10% 50% 10% 50% v gs pulse width v ds t on t off t r t d(on) t f t d(off) v g v gs charge q g q gs q gd v gs i g(const.) v d s d.u.t. i d r l v dd fig.1-1 switching time measurement circuit fig.1-2 switching waveforms fig.2-1 gate charge measurement circuit fig.2-2 gate charge waveform 6/6 2011.04 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
r 1 120 a ww w .rohm.com ? 20 1 1 rohm co., ltd. all rights reserved. notice rohm customer support system http://ww w . r ohm.com/contact/ thank you for your accessing to rohm p r oduct informations. mo r e detail p r oduct informations and catalogs a r e available, please contact us. notes
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